inchange semiconductor isc product specification isc silicon pnp power transistor BD540B description dc current gain - : h fe = 40(min.)@ i c = - 0.5a collector-emitter breakdown voltage- : v (br)ceo = -80v(min) complement to type bd539b applications designed for use in medium power linear and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -80 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current-continuous -5 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 45 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.78 /w r th j-a thermal resistance, junction to ambient 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BD540B electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = -30ma; i b = 0 -80 v v ce( sat )-1 collector-emitter saturation voltage i c = -1a; i b = -0.125a b -0.25 v v ce( sat )-2 collector-emitter saturation voltage i c = -3a; i b = -0.375a b -0.8 v v ce( sat )-3 collector-emitter saturation voltage i c = -5a; i b = -1a b -1.5 v v be( on ) base-emitter on voltage i c = -3a; v ce = -4v -1.25 v i ceo collector cutoff current v cb = -60v; i b = 0 b -0.3 ma i ces collector cutoff current v ce = -80v; v be = 0 -0.2 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -1.0 ma h fe-1 dc current gain i c = -0.5a; v ce = -4v 40 h fe-2 dc current gain i c = -1a; v ce = -4v 30 h fe-3 dc current gain i c = -3a; v ce = -4v 12 isc website www.iscsemi.cn 2
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